不良导体热系数和热体散热率测量方法研究(英文)

本文介绍一种直接测量散热率新方法．进而测出不良导体的热系数。该方法，减小了由间接测量散热率所带来的误差，实验装置简单，操作方便，参数少，测量结果的精确性和重复性都有较大提高，更重要的是这一新的实验方法突出了物理思想。     

处理原子-辐射场相互作用系统的变分方法

用Heisenberg-Weyl(简H-W)群直积SU(2)群上的相干态表述了原子-辐射场相互作用系统的非平衡态统计力学.引入一个新定义的含时分布函数,将非平衡态下密度矩阵所满足的von Neumann方程转化成可分离变量的偏微分方程,给出了方程的形式解,算符的平均值表示.本文还就便于作微扰展开的相互作用绘景作了讨论.     

Preparation and structural stability investigation of CoN/CN soft X-ray multilayers

The structural stability of heat-treated CoN/CN soft X-ray multilayers fabricated by dual-facing-target sputtering has been investigated by using complementary measurement techniques. The high temperature annealing results imply that the destructive threshold of the Co/C multilayers is improved by 100–200 degrees centigrade through doping with N. The low-angle X-ray diffraction of CoN/CN soft X-ray multilayers indicates that the period expansion of the multilayers is only 4 % at 400°C, and the interface pattern still exists even if they were annealed at 700°C. The Raman spectra analyses give the evidence that the formation of the sp³ bonding in the CN sublayers can be suppressed effectively by doping N with atoms, and thus the period expansion resulting from the changes in the density of CN layers can be decreased considerably. The X-ray photoelectron spectra analyses present the information of the existence of the strong covalent bonding betweenC andN atoms, and the ionic bonding between Co and N atoms, which can slow down the tendency of the structural relaxation. The interstitial N atoms decrease the mobility of Co atoms, and thus the fcc-Co and hcp-Co coexist even though the annealing temperature is much higher than the phase transformation temperature of 420°C, leading to the suppression of the grain growth.     

四氢β—咔啉类化合物的~(13)C NMR研究

测定了四对新合成的四氢β-咔啉化合物的~13C NMR谱,通过APT,HETCOR和HETCOLOC谱指认了所有碳的归属.所确定的化学位移规律可以用来确定它们的构型.     

Accurate mass measurements of organic compounds by an internal standard method for laser desorption/electron impact fourier transform mass spectrometry

A method for determining accurate relative molecular masses and elemental compositions of several non-volatile and thermally labile organic compounds in the source cell was established. The experimental sequence included laser desorption/electron impact Fourier transform mass spectrometry and direct-mode observation over a narrow mass range. Perfluorotributylamine was used as internal calibrant. Errors were about 1 ppm.     

Si1－xGex/Si量子阱发光材料的分子束外延生长及其结构研究

采用固源Si分子束外延,在较高的生长温度于Si(100)衬底上制备出Si1－xGex/Si量子阱发光材料。发光样品的质量和特性通过卢瑟福背散射、X射线双晶衍射及光致发光评估。背散射实验中观察到应变超晶格的反常沟道效应;X射线分析表明材料的生长是共度的、无应力释放的,结晶完整性好。低温光致发光主要是外延合金量子阱中带边激子的无声发射和横光学声子参与的激子复合。并讨论了生长温度对量于阱发光的影响。     

The optical properties of planar waveguides in LiB3O5 crystals formed by Cu implantation

A planar optical waveguide has been formed in a LiB₃O₅ crystal using 6.0 MeV Cu⁺-ions with a dose of 1 × 10¹⁵ ions/cm² at room temperature. Possible propagating modes were measured at a wavelength of 633 nm using the prism-coupling method. The refractive index profiles of the waveguide were reconstructed by an effective refractive index method and the beam propagation method was used to investigate the properties of the propagation modes in the formed waveguide. The results suggest that the fundamental TE₀ and TM₀ modes may be well-confined and propagate a longer distance inside the waveguide. The implantation process was also simulated using the transport of ions in matter code (TRIM), which indicates that the nuclear energy deposition may be the main factor for the refractive index change.     

Windows CE.Net嵌入式操作系统本地化研究及实现

本文对嵌入式Windows CE.Net操作系统的主要体系结构进行剖析.研究设计出了维吾尔文本地化环境,利用资源编译器编译和反编译功能,构建了基于Windows CE.Net平台的维吾尔文图形用户界面资源库,实现Windows CE.Net的界面维文化和基于Windows CE.Net的应用程序的维文支持;开发了输入法程序,实现Windows CE.Net的维吾尔文字键盘输入和软键盘输入;通过编制维吾尔文字库,为Windows CE.Net平台下维吾尔文字的显示、打印提供了基础.     

四（对-羟基苯基）卟啉氧合配合物的室温固相合成，表征及氧合能力

采用固相反应合成了四羟基苯基卟啉与与Fe^2＋,Co^2＋金属离子的配合物,在室温下,将其与分子O2作用,提纯后得到两种固态氧合配合物．通过元素分析、红外光谱（IR）、核磁共振氢谱（^1HNMR）、电导、热分析（TG／DTA）、紫外光谱（UV）等测试手段确定了氧合配合物的组成为[Co·THPP·O2]（NO3）2·2H2O、[Fe·THPP·O2]Cl2·2H2O]，可知1mol配合物吸收了1molO2,采用失重法测定了氧合配合物中的配位氧,确定1mol金属配合物吸收1molO2形成超氧配合物．     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p